Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions
Ultrafast-response (20 μs) UV detectors, which are visible-blind and self-powered, in devices where an n-type ZnO nanowire partially lies on a p-type GaN film, are demonstrated. Moreover, a CdSe-nanowire red-light detector powered by a nanoscale ZnO/GaN photovoltaic cell is also demonstrated, which...
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Bibliographische Detailangaben
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 23(2011), 5 vom: 01. Feb., Seite 649-53
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| 1. Verfasser: |
Bie, Ya-Qing
(VerfasserIn) |
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| Weitere Verfasser: |
Liao, Zhi-Min,
Zhang, Hong-Zhou,
Li, Guang-Ru,
Ye, Yu,
Zhou, Yang-Bo,
Xu, Jun,
Qin, Zhi-Xin,
Dai, Lun,
Yu, Da-Peng |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2011
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.)
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| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't
gallium nitride
1R9CC3P9VL
Gallium
CH46OC8YV4
Zinc Oxide
SOI2LOH54Z |
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