Disulfide passivation of the Ge(100)-2 × 1 surface
Understanding the bonding of sulfur at the germanium surface is important to developing good passivation routes for germanium-based electronic devices. The adsorption behavior of ethyl disulfide (EDS) and 1,8-naphthalene disulfide (NDS) at the Ge(100)-2 × 1 surface has been studied under ultrahigh v...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 27(2011), 1 vom: 04. Jan., Seite 179-86
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| 1. Verfasser: |
Kachian, Jessica S
(VerfasserIn) |
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| Weitere Verfasser: |
Tannaci, John,
Wright, Robert J,
Tilley, T Don,
Bent, Stacey F |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2011
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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