Disulfide passivation of the Ge(100)-2 × 1 surface
Understanding the bonding of sulfur at the germanium surface is important to developing good passivation routes for germanium-based electronic devices. The adsorption behavior of ethyl disulfide (EDS) and 1,8-naphthalene disulfide (NDS) at the Ge(100)-2 × 1 surface has been studied under ultrahigh v...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 27(2011), 1 vom: 04. Jan., Seite 179-86 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2011
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Zusammenfassung: | Understanding the bonding of sulfur at the germanium surface is important to developing good passivation routes for germanium-based electronic devices. The adsorption behavior of ethyl disulfide (EDS) and 1,8-naphthalene disulfide (NDS) at the Ge(100)-2 × 1 surface has been studied under ultrahigh vacuum conditions to investigate both their fundamental reactivity and their effectiveness as passivants of this surface. X-ray photoelectron spectroscopy, multiple internal reflection-infrared spectroscopy, and density functional theory results indicate that both molecules adsorb via S-S dissociation at room temperature. Upon exposure to ambient air, the thiolate adlayer remains intact for both EDS- and NDS-functionalized surfaces, indicating the stability of this surface attachment. Although both systems resist oxidation compared to the bare Ge(100)-2 × 1 surface, the Ge substrate is significantly oxidized in all cases (17-57% relative to the control), with the NDS-passivated surface undergoing up to two times more oxidation than the EDS-passivated surface at the longest air exposure times studied. The difference in passivation capability is attributed to the difference in surface coverage on Ge(100)-2 × 1, where EDS adsorption leads to a saturation coverage 17% higher than that for NDS/Ge(100)-2 × 1 |
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| Beschreibung: | Date Completed 12.04.2011 Date Revised 28.12.2010 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/la103614f |