Comparison of BST film microwave tunable devices based on (100) and (111) MgO substrates
We have increased the figure-of-merit (FOM) of a (Ba,Sr)TiO₃ (BST) film microwave tunable device by approximately three times for MgO(111) compared with a MgO(100) substrate at a frequency range of 20 GHz. Differences in permittivity and tunability in a BST film may be closely related to the differe...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 57(2010), 10 vom: 01. Okt., Seite 2221-7 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2010
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Journal Article |
| Zusammenfassung: | We have increased the figure-of-merit (FOM) of a (Ba,Sr)TiO₃ (BST) film microwave tunable device by approximately three times for MgO(111) compared with a MgO(100) substrate at a frequency range of 20 GHz. Differences in permittivity and tunability in a BST film may be closely related to the difference in the film strain. The ratio of calculated permittivities of BST(100) and BST(111) films nearly corresponds to that of the FOM in the microwave range, which was rather unexpected because a higher permittivity leads to both larger tunability and dielectric loss in ferroelectrics. From a series of results, it is suggested that there are additional influences of orientation (other than the direct influence of strain itself) on the tunable properties in BST films especially in the high-frequency region |
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| Beschreibung: | Date Completed 10.01.2011 Date Revised 04.10.2010 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 1525-8955 |
| DOI: | 10.1109/TUFFC.2010.1681 |