Comparison of BST film microwave tunable devices based on (100) and (111) MgO substrates

We have increased the figure-of-merit (FOM) of a (Ba,Sr)TiO₃ (BST) film microwave tunable device by approximately three times for MgO(111) compared with a MgO(100) substrate at a frequency range of 20 GHz. Differences in permittivity and tunability in a BST film may be closely related to the differe...

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 57(2010), 10 vom: 01. Okt., Seite 2221-7
1. Verfasser: Noda, Minoru (VerfasserIn)
Weitere Verfasser: Yamada, Tomoaki, Seki, Kousuke, Kamo, Takafumi, Yamashita, Kaoru, Funakubo, Horoshi, Okuyama, Masanori
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2010
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article