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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2010.1677
|2 doi
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|a pubmed25n0673.xml
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Yanrong
|e verfasserin
|4 aut
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|a Study of the integrated growth of dielectric films on GaN semiconductor substrates
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|c 2010
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 10.01.2011
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|a Date Revised 04.10.2010
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Typical perovskite oxides SrTiO₃ (STO) and PbZr₀.₅₂Ti₀.₄₈O₃ (PZT) were fabricated on GaN semiconductor substrates by pulsed laser deposition. STO and PZT films were deposited on bare GaN, TiO₂, and MgO-buffered GaN. The effects of TiO₂ and MgO buffer-layers on the orientations and electric properties of the perovskite films were systematically studied. The crystalline properties were in situ monitored by reflective high energy electron diffraction and ex situ characterized by X-ray diffraction. It was found that the epitaxial temperature of STO and PZT was reduced by inserting a buffer layer. (111)-oriented films were obtained on bare and TiO₂-buffered GaN. However, the orientations of the perovskite films were changed to be (110) when deposited on MgO buffer layer. Furthermore, PZT films deposited on MgO- and TiO₂-buffered GaN show better electric performance compared with these films directly deposited on GaN. These results show that perovskite oxide could be epitaxially grown on GaN semiconductor substrates by inserting a proper buffer layer
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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1 |
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|a Zhu, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Wenbo
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 57(2010), 10 vom: 01. Okt., Seite 2192-7
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnas
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| 773 |
1 |
8 |
|g volume:57
|g year:2010
|g number:10
|g day:01
|g month:10
|g pages:2192-7
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|u http://dx.doi.org/10.1109/TUFFC.2010.1677
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