Study of the integrated growth of dielectric films on GaN semiconductor substrates
Typical perovskite oxides SrTiO₃ (STO) and PbZr₀.₅₂Ti₀.₄₈O₃ (PZT) were fabricated on GaN semiconductor substrates by pulsed laser deposition. STO and PZT films were deposited on bare GaN, TiO₂, and MgO-buffered GaN. The effects of TiO₂ and MgO buffer-layers on the orientations and electric propertie...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 57(2010), 10 vom: 01. Okt., Seite 2192-7
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| 1. Verfasser: |
Li, Yanrong
(VerfasserIn) |
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| Weitere Verfasser: |
Zhu, Jun,
Luo, Wenbo |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2010
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't |
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