Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits
Metal-semiconductor field-effect transistors (MESFETs) are widely known from opaque high-speed GaAs or high-power SiC and GaN technology. For the emerging field of transparent electronics, only metal-insulator-semiconductor field-effect transistors (MISFETs) were considered so far. This article revi...
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Bibliographische Detailangaben
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 22(2010), 47 vom: 14. Dez., Seite 5332-49
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| 1. Verfasser: |
Frenzel, Heiko
(VerfasserIn) |
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| Weitere Verfasser: |
Lajn, Alexander,
von Wenckstern, Holger,
Lorenz, Michael,
Schein, Friedrich,
Zhang, Zhipeng,
Grundmann, Marius |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2010
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.)
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| Schlagworte: | Journal Article
Research Support, Non-U.S. Gov't
Review
Arsenicals
Carbon Compounds, Inorganic
Silicon Compounds
gallium nitride
1R9CC3P9VL
gallium arsenide
27FC46GA44
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Gallium
CH46OC8YV4
Aluminum Oxide
LMI26O6933
Zinc Oxide
SOI2LOH54Z
silicon carbide
WXQ6E537EW |
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