Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 22(2010), 12 vom: 26. März, Seite 1346-50
1. Verfasser: Jeong, Sunho (VerfasserIn)
Weitere Verfasser: Ha, Young-Geun, Moon, Jooho, Facchetti, Antonio, Marks, Tobin J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2010
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Indium 045A6V3VFX indium oxide 4OO9KME22D Gallium CH46OC8YV4 Zinc Oxide SOI2LOH54Z
LEADER 01000naa a22002652 4500
001 NLM197780628
003 DE-627
005 20231223211320.0
007 cr uuu---uuuuu
008 231223s2010 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.200902450  |2 doi 
028 5 2 |a pubmed24n0659.xml 
035 |a (DE-627)NLM197780628 
035 |a (NLM)20437479 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Jeong, Sunho  |e verfasserin  |4 aut 
245 1 0 |a Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors 
264 1 |c 2010 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 09.09.2010 
500 |a Date Revised 30.09.2020 
500 |a published: Print 
500 |a Citation Status MEDLINE 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 7 |a Indium  |2 NLM 
650 7 |a 045A6V3VFX  |2 NLM 
650 7 |a indium oxide  |2 NLM 
650 7 |a 4OO9KME22D  |2 NLM 
650 7 |a Gallium  |2 NLM 
650 7 |a CH46OC8YV4  |2 NLM 
650 7 |a Zinc Oxide  |2 NLM 
650 7 |a SOI2LOH54Z  |2 NLM 
700 1 |a Ha, Young-Geun  |e verfasserin  |4 aut 
700 1 |a Moon, Jooho  |e verfasserin  |4 aut 
700 1 |a Facchetti, Antonio  |e verfasserin  |4 aut 
700 1 |a Marks, Tobin J  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 22(2010), 12 vom: 26. März, Seite 1346-50  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:22  |g year:2010  |g number:12  |g day:26  |g month:03  |g pages:1346-50 
856 4 0 |u http://dx.doi.org/10.1002/adma.200902450  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 22  |j 2010  |e 12  |b 26  |c 03  |h 1346-50