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|a (NLM)20383298
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|a eng
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|a Liu, Po-Tsun
|e verfasserin
|4 aut
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|a Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology
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|c 2010
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Revised 20.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state
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|a Journal Article
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|a Huang, Chen-Shuo
|e verfasserin
|4 aut
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|a Huang, Yi-Ling
|e verfasserin
|4 aut
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|a Lin, Jing-Ru
|e verfasserin
|4 aut
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|a Cheng, Szu-Lin
|e verfasserin
|4 aut
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|a Nishi, Yoshio
|e verfasserin
|4 aut
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|a Sze, S M
|e verfasserin
|4 aut
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|i Enthalten in
|t Applied physics letters
|d 1998
|g 96(2010), 11 vom: 15. März, Seite 112902
|w (DE-627)NLM098165984
|x 0003-6951
|7 nnns
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| 773 |
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|g volume:96
|g year:2010
|g number:11
|g day:15
|g month:03
|g pages:112902
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|a GBV_ILN_350
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|a AR
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|d 96
|j 2010
|e 11
|b 15
|c 03
|h 112902
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