Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters. - 1998. - 96(2010), 11 vom: 15. März, Seite 112902
1. Verfasser:	Liu, Po-Tsun (VerfasserIn)
Weitere Verfasser:	Huang, Chen-Shuo, Huang, Yi-Ling, Lin, Jing-Ru, Cheng, Szu-Lin, Nishi, Yoshio, Sze, S M
Format:	Aufsatz
Sprache:	English
Veröffentlicht:	2010
Zugriff auf das übergeordnete Werk:	Applied physics letters
Schlagworte:	Journal Article

Beschreibung
Zusammenfassung:	Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state
Beschreibung:	Date Revised 20.10.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	0003-6951