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231223s2010 xx |||||o 00| ||eng c |
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|a 10.1109/TUFFC.2010.1376
|2 doi
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|a pubmed24n0647.xml
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Rinaldi, Matteo
|e verfasserin
|4 aut
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| 245 |
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|a Super-high-frequency two-port AlN contour-mode resonators for RF applications
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|c 2010
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 10.03.2010
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|a Date Revised 30.12.2009
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|a published: Print
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|a Citation Status MEDLINE
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|a This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt(2), in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported
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|a Journal Article
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Membranes, Artificial
|2 NLM
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| 700 |
1 |
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|a Zuniga, Chiara
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zuo, Chengjie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Piazza, Gianluca
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1986
|g 57(2010), 1 vom: 19. Jan., Seite 38-45
|w (DE-627)NLM098181017
|x 1525-8955
|7 nnns
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| 773 |
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|g volume:57
|g year:2010
|g number:1
|g day:19
|g month:01
|g pages:38-45
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|u http://dx.doi.org/10.1109/TUFFC.2010.1376
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|h 38-45
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