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231223s2009 xx |||||o 00| ||eng c |
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|a 10.1021/la903211x
|2 doi
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|a DE-627
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|a eng
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| 100 |
1 |
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|a George, Antony
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Nanopatterning from the gas phase
|b high resolution soft lithographic patterning of organosilane thin films
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| 264 |
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|c 2009
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| 336 |
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|a Text
|b txt
|2 rdacontent
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| 337 |
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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| 500 |
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|a Date Completed 01.02.2010
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| 500 |
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|a Date Revised 25.11.2009
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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| 520 |
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|a A general methodology for nanopatterning organosilane thin films directly from vapor phase precursors is presented. Aminosilane line patterns with a width of approximately 200 nm in an area of 1 cm(2) were fabricated on silicon substrates by diffusion of aminosilane vapor through the open channels of PDMS stamps bonded to a substrate. The patterned thin films were characterized by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Patterns were initially formed at the three-phase boundary lines between substrate, PDMS mold, and vapor by exploiting the fact that vapors condense preferentially in geometrically restricted areas with a concave shape compared to flat surfaces. The lateral resolution of the formed patterns is about 1 order of magnitude smaller than the feature sizes of the PDMS stamp. Prolonged exposure to the precursor vapor resulted in micrometer-sized patterns with similar features and dimensions as the stamp. This methodology provides an easy and low cost parallel fabrication route of functional organosilane nanoscale patterns of arbitrary shape and composition from micrometer-size patterned stamps
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|a Journal Article
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1 |
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|a Blank, Dave H A
|e verfasserin
|4 aut
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| 700 |
1 |
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|a ten Elshof, Johan E
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 25(2009), 23 vom: 01. Dez., Seite 13298-301
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|x 1520-5827
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| 773 |
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|g volume:25
|g year:2009
|g number:23
|g day:01
|g month:12
|g pages:13298-301
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|u http://dx.doi.org/10.1021/la903211x
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