Self-assembled monolayers of alkanethiols on InAs

We describe the deposition and properties of self-assembled monolayers (SAMs) of methyl-terminated alkanethiols on InAs(001) surface. For these model hydrophobic films, we used water contact angle measurements to survey the preparation of alkanethiol monolayers from base-activated ethanolic solution...

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Détails bibliographiques
Publié dans:Langmuir : the ACS journal of surfaces and colloids. - 1985. - 25(2009), 20 vom: 20. Okt., Seite 12185-94
Auteur principal: Petrovykh, Dmitri Y (Auteur)
Autres auteurs: Smith, Jennifer C, Clark, Thomas D, Stine, Rory, Baker, Lane A, Whitman, Lloyd J
Format: Article en ligne
Langue:English
Publié: 2009
Accès à la collection:Langmuir : the ACS journal of surfaces and colloids
Sujets:Journal Article
Description
Résumé:We describe the deposition and properties of self-assembled monolayers (SAMs) of methyl-terminated alkanethiols on InAs(001) surface. For these model hydrophobic films, we used water contact angle measurements to survey the preparation of alkanethiol monolayers from base-activated ethanolic solutions as a function of the solution and deposition parameters, including chain length of alkanethiols, deposition time, and solution temperature and pH. We then used X-ray photoelectron spectroscopy (XPS), ellipsometry, and electrochemistry to characterize the composition and structure of octadecanethiol (ODT) monolayers deposited on InAs under optimized conditions. When applied to a thoroughly degreased InAs(001) wafer surface, the basic ODT solution removes the native oxide without excessively etching the underlying InAs(001) substrate. The resulting film contains approximately one monolayer of ODT molecules, attached to the InAs surface almost exclusively via thiolate bonds to In atoms, with organic chains extended away from the surface. These ODT monolayers are stable against degradation and oxidation in air, organic solvents, and aqueous buffers. The same base-activated ODT treatment can also be used to passivate exposed InAs/AlSb quantum well (QW) devices, preserving the unique electronic properties of InAs surfaces and allowing the operation of such passivated devices as continuous flow pH-sensors
Description:Date Completed 25.01.2010
Date Revised 13.10.2009
published: Print
Citation Status PubMed-not-MEDLINE
ISSN:1520-5827
DOI:10.1021/la804314j