Self-assembled monolayers of alkanethiols on InAs

We describe the deposition and properties of self-assembled monolayers (SAMs) of methyl-terminated alkanethiols on InAs(001) surface. For these model hydrophobic films, we used water contact angle measurements to survey the preparation of alkanethiol monolayers from base-activated ethanolic solution...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 25(2009), 20 vom: 20. Okt., Seite 12185-94
1. Verfasser: Petrovykh, Dmitri Y (VerfasserIn)
Weitere Verfasser: Smith, Jennifer C, Clark, Thomas D, Stine, Rory, Baker, Lane A, Whitman, Lloyd J
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2009
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a We describe the deposition and properties of self-assembled monolayers (SAMs) of methyl-terminated alkanethiols on InAs(001) surface. For these model hydrophobic films, we used water contact angle measurements to survey the preparation of alkanethiol monolayers from base-activated ethanolic solutions as a function of the solution and deposition parameters, including chain length of alkanethiols, deposition time, and solution temperature and pH. We then used X-ray photoelectron spectroscopy (XPS), ellipsometry, and electrochemistry to characterize the composition and structure of octadecanethiol (ODT) monolayers deposited on InAs under optimized conditions. When applied to a thoroughly degreased InAs(001) wafer surface, the basic ODT solution removes the native oxide without excessively etching the underlying InAs(001) substrate. The resulting film contains approximately one monolayer of ODT molecules, attached to the InAs surface almost exclusively via thiolate bonds to In atoms, with organic chains extended away from the surface. These ODT monolayers are stable against degradation and oxidation in air, organic solvents, and aqueous buffers. The same base-activated ODT treatment can also be used to passivate exposed InAs/AlSb quantum well (QW) devices, preserving the unique electronic properties of InAs surfaces and allowing the operation of such passivated devices as continuous flow pH-sensors 
650 4 |a Journal Article 
700 1 |a Smith, Jennifer C  |e verfasserin  |4 aut 
700 1 |a Clark, Thomas D  |e verfasserin  |4 aut 
700 1 |a Stine, Rory  |e verfasserin  |4 aut 
700 1 |a Baker, Lane A  |e verfasserin  |4 aut 
700 1 |a Whitman, Lloyd J  |e verfasserin  |4 aut 
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