|
|
|
|
| LEADER |
01000naa a22002652 4500 |
| 001 |
NLM18906918X |
| 003 |
DE-627 |
| 005 |
20231223183013.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231223s2009 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1021/la900942e
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n0630.xml
|
| 035 |
|
|
|a (DE-627)NLM18906918X
|
| 035 |
|
|
|a (NLM)19499936
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Xu, Yi-Jun
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by cycloaddition of transition metal oxides
|b a theoretical prediction
|
| 264 |
|
1 |
|c 2009
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Completed 03.11.2009
|
| 500 |
|
|
|a Date Revised 21.11.2013
|
| 500 |
|
|
|a published: Print
|
| 500 |
|
|
|a Citation Status MEDLINE
|
| 520 |
|
|
|a The viability of functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by traditional [3 + 2] cycloaddition of transition metal oxides has been predicted using effective cluster models in the framework of density functional theory. The cycloaddition of transition metal oxides (OsO(4), RuO(4), and MnO(4)(-)) onto the X (100) (X = C, Si, and Ge) surface is much more facile than that of other molecular analogues including ethylene, fullerene, and single-walled carbon nanotubes because of the high reactivity of surface dimers of X (100). Our computational results demonstrate the plausibility that the well-known [3 + 2] cycloaddition of transition metal oxides to alkenes in organic chemistry can be employed as a new type of surface reaction to functionalize the semiconductor X (100) surface, which offers the new possibility for self-assembly or chemical functionalization of X (100) at low temperature. More importantly, the chemical functionalization of X (100) by cycloaddition of transition metal oxides provides the molecular basis for preparation of semiconductor-supported catalysts but also strongly advances the concept of using organic reactions to modify the solid surface, particularly to modify the semiconductor C (100), Si (100), and Ge (100) surfaces for target applications in numerous fields such as microelectronics and heterogeneous photocatalysis
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a Research Support, Non-U.S. Gov't
|
| 650 |
|
7 |
|a Fullerenes
|2 NLM
|
| 650 |
|
7 |
|a Metals
|2 NLM
|
| 650 |
|
7 |
|a Oxides
|2 NLM
|
| 650 |
|
7 |
|a Germanium
|2 NLM
|
| 650 |
|
7 |
|a 00072J7XWS
|2 NLM
|
| 650 |
|
7 |
|a Diamond
|2 NLM
|
| 650 |
|
7 |
|a 7782-40-3
|2 NLM
|
| 650 |
|
7 |
|a Silicon
|2 NLM
|
| 650 |
|
7 |
|a Z4152N8IUI
|2 NLM
|
| 700 |
1 |
|
|a Fu, Xianzhi
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 25(2009), 17 vom: 01. Sept., Seite 9840-6
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
|
| 773 |
1 |
8 |
|g volume:25
|g year:2009
|g number:17
|g day:01
|g month:09
|g pages:9840-6
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1021/la900942e
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_22
|
| 912 |
|
|
|a GBV_ILN_350
|
| 912 |
|
|
|a GBV_ILN_721
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 25
|j 2009
|e 17
|b 01
|c 09
|h 9840-6
|