Functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by cycloaddition of transition metal oxides : a theoretical prediction
The viability of functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by traditional [3 + 2] cycloaddition of transition metal oxides has been predicted using effective cluster models in the framework of density functional theory. The cycloaddition of transition m...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1991. - 25(2009), 17 vom: 01. Sept., Seite 9840-6 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
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2009
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article Research Support, Non-U.S. Gov't Fullerenes Metals Oxides Germanium 00072J7XWS Diamond 7782-40-3 Silicon |
| Zusammenfassung: | The viability of functionalization of the semiconductor surfaces of diamond (100), Si (100), and Ge (100) by traditional [3 + 2] cycloaddition of transition metal oxides has been predicted using effective cluster models in the framework of density functional theory. The cycloaddition of transition metal oxides (OsO(4), RuO(4), and MnO(4)(-)) onto the X (100) (X = C, Si, and Ge) surface is much more facile than that of other molecular analogues including ethylene, fullerene, and single-walled carbon nanotubes because of the high reactivity of surface dimers of X (100). Our computational results demonstrate the plausibility that the well-known [3 + 2] cycloaddition of transition metal oxides to alkenes in organic chemistry can be employed as a new type of surface reaction to functionalize the semiconductor X (100) surface, which offers the new possibility for self-assembly or chemical functionalization of X (100) at low temperature. More importantly, the chemical functionalization of X (100) by cycloaddition of transition metal oxides provides the molecular basis for preparation of semiconductor-supported catalysts but also strongly advances the concept of using organic reactions to modify the solid surface, particularly to modify the semiconductor C (100), Si (100), and Ge (100) surfaces for target applications in numerous fields such as microelectronics and heterogeneous photocatalysis |
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| Beschreibung: | Date Completed 03.11.2009 Date Revised 21.11.2013 published: Print Citation Status MEDLINE |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/la900942e |