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231223s2009 xx |||||o 00| ||eng c |
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|a 10.1021/la900795d
|2 doi
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|a eng
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| 100 |
1 |
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|a Moran, Isaac W
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Direct passivation of hydride-terminated silicon (100) surfaces by free-radically tethered polymer brushes
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|c 2009
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 13.10.2009
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|a Date Revised 01.09.2009
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a A simple and effective means for passivating crystalline silicon is reported by the use of free-radical polymerization (FRP) to directly graft polymer chains to a hydride-terminated surface (Si-H). Complete surface coverage and passivation was achieved in approximately 24 h at 60 degrees C or 30 min at 90 degrees C. Mechanistic studies determined that chain attachment followed a hydride-transfer-based grafting-to mechanism. The grafting process is compatible with a variety of monomers and was used to assemble polymer brush layers (2-12 nm thick), with grafting densities ranging from 0.02 to 0.65 chains/nm2 rivaling densities typically obtained by grafting-from scenarios. This new passivation route provides a uniquely accessible means to covalently anchor dense polymer brushes to silicon surfaces without the need for functionalization of the polymer chain ends or the substrate
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|a Journal Article
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| 700 |
1 |
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|a Carter, Kenneth R
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 25(2009), 16 vom: 18. Aug., Seite 9232-9
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|g year:2009
|g number:16
|g day:18
|g month:08
|g pages:9232-9
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