Direct passivation of hydride-terminated silicon (100) surfaces by free-radically tethered polymer brushes
A simple and effective means for passivating crystalline silicon is reported by the use of free-radical polymerization (FRP) to directly graft polymer chains to a hydride-terminated surface (Si-H). Complete surface coverage and passivation was achieved in approximately 24 h at 60 degrees C or 30 min...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 25(2009), 16 vom: 18. Aug., Seite 9232-9 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
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2009
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Online verfügbar |
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