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231223s2009 xx |||||o 00| ||eng c |
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|a 10.1021/la803581k
|2 doi
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|a pubmed24n0619.xml
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|a (NLM)19140733
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|a eng
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|a Li, Meng
|e verfasserin
|4 aut
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|a Atomic layer deposition of aluminum oxide on carboxylic acid-terminated self-assembled monolayers
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|c 2009
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 31.03.2009
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|a Date Revised 21.11.2013
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|a published: Print
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|a Citation Status MEDLINE
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|a In situ infrared absorption spectroscopy is used to monitor atomic layer deposition (ALD) of aluminum oxide (Al2O3) on carboxylic acid-terminated self-assembled monolayers (SAMs), Si(111)-(CH2)10-COOH (or COOH-SAMs), directly grafted on silicon (111) at approximately 100 degrees C. The quality of resulting Al2O3 films is comparable to Al2O3 on SiO2. Both the SAM film and the Si/SAM interface remain chemically stable during growth and upon post annealing to 400 degrees C, suggesting that the tight packing of the alkyl chains and COOH-SAM head groups presents a diffusion barrier and promotes ordered nucleation for ALD
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|a Journal Article
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a Carboxylic Acids
|2 NLM
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|a Aluminum Oxide
|2 NLM
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|a LMI26O6933
|2 NLM
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|a Dai, Min
|e verfasserin
|4 aut
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|a Chabal, Yves J
|e verfasserin
|4 aut
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 25(2009), 4 vom: 17. Feb., Seite 1911-4
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|x 1520-5827
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|g volume:25
|g year:2009
|g number:4
|g day:17
|g month:02
|g pages:1911-4
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|u http://dx.doi.org/10.1021/la803581k
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