Atomic layer deposition of aluminum oxide on carboxylic acid-terminated self-assembled monolayers
In situ infrared absorption spectroscopy is used to monitor atomic layer deposition (ALD) of aluminum oxide (Al2O3) on carboxylic acid-terminated self-assembled monolayers (SAMs), Si(111)-(CH2)10-COOH (or COOH-SAMs), directly grafted on silicon (111) at approximately 100 degrees C. The quality of re...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 25(2009), 4 vom: 17. Feb., Seite 1911-4 |
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| Weitere Verfasser: | , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2009
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article Research Support, U.S. Gov't, Non-P.H.S. Carboxylic Acids Aluminum Oxide LMI26O6933 |
| Zusammenfassung: | In situ infrared absorption spectroscopy is used to monitor atomic layer deposition (ALD) of aluminum oxide (Al2O3) on carboxylic acid-terminated self-assembled monolayers (SAMs), Si(111)-(CH2)10-COOH (or COOH-SAMs), directly grafted on silicon (111) at approximately 100 degrees C. The quality of resulting Al2O3 films is comparable to Al2O3 on SiO2. Both the SAM film and the Si/SAM interface remain chemically stable during growth and upon post annealing to 400 degrees C, suggesting that the tight packing of the alkyl chains and COOH-SAM head groups presents a diffusion barrier and promotes ordered nucleation for ALD |
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| Beschreibung: | Date Completed 31.03.2009 Date Revised 21.11.2013 published: Print Citation Status MEDLINE |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/la803581k |