A silicon electrostatic ultrasonic transducer
An electric ultrasonic transducer is developed by using a silicon IC process. Design considerations are first presented to obtain high sensitivity and the desired frequency responses in air. The measured transmitter sensitivity is 19.1 dB (0 dB=1 mubar/V) at a point 50 cm away from the devices, when...
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 36(1989), 6 vom: 15., Seite 620-7 |
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| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
1989
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Schlagworte: | Journal Article |