Key integration technologies for nanoscale FRAMs
We discuss key technologies of 180-nm node ferroelectric memories, whose process integration is becoming extremely complex when device dimension shrinks into a nano scale. This is because process technology in ferroelectric integration does not extend to conventional shrink technology due to many di...
Ausführliche Beschreibung
Bibliographische Detailangaben
| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 54(2007), 12 vom: 30. Dez., Seite 2535-40
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| 1. Verfasser: |
Jung, Dong J
(VerfasserIn) |
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| Weitere Verfasser: |
Kim, Hyun-Ho,
Kim, Kinam |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2007
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| Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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| Schlagworte: | Journal Article |
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