Theoretical investigation of the SAW properties of ferroelectric film composite structures
The characteristics of surface acoustic waves (SAW) propagating on a three-layered structure consisting of a perovskite-type ferroelectric film, a buffer layer and a semiconductor substrate have been studied theoretically. Large coupling coefficients (K(2)) can be obtained when the interdigital tran...
| Publié dans: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 45(1998), 2 vom: 15., Seite 305-16 |
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| Auteur principal: | |
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| Format: | Article en ligne |
| Langue: | English |
| Publié: |
1998
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| Accès à la collection: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| Sujets: | Journal Article |
| Résumé: | The characteristics of surface acoustic waves (SAW) propagating on a three-layered structure consisting of a perovskite-type ferroelectric film, a buffer layer and a semiconductor substrate have been studied theoretically. Large coupling coefficients (K(2)) can be obtained when the interdigital transducer (IDT) is on top of the perovskite-type ferroelectric film, with (type 4) and without (type 3) the floating-plane electrode at the perovskite-type ferroelectric film-buffer layer interface. In the above cases, the peak values of K (2) Of the Pb(Zr,Ti)O(3) (PZT) films (3.2%-3.8%) are higher than those of the BaTiO(3) (BT) and PbTiO(3) (PT) films. In the IDT configuration of type 4, there exists a minor peak of the coupling coefficients for the PZT and BT films, but not for the PT films when the normalized thickness (hK) of the perovskite-type ferroelectric film is about 0.3. The minor peak values of the coupling coefficients (0.62%-0.93%) for different layered structures (PZT/STO/Si, PZT/MgO/Si, and PZT/MgO/GaAs) all decrease when we increase hK value from 0 to 0.25. The results could be useful in the integration of ferroelectric devices, semiconductor devices, and SAW devices on the same substrate |
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| Description: | Date Completed 02.10.2012 Date Revised 04.02.2008 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 1525-8955 |
| DOI: | 10.1109/58.660141 |