Novel concepts for GaAs/LiNbO(3) layered systems and their device applications
Thin semiconductor quantum well structures fused onto LiNbO(3 ) substrates using the epitaxial lift-off (ELO) technology offer the possibility of controlling the surface acoustic wave (SAW) velocity via field effect. The tunability of the conductivity in the InGaAs quantum well results in a great ch...
Ausführliche Beschreibung
Bibliographische Detailangaben
Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 47(2000), 1 vom: 28., Seite 242-8
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1. Verfasser: |
Rotter, M
(VerfasserIn) |
Weitere Verfasser: |
Ruile, W,
Scholl, G,
Wixforth, A |
Format: | Online-Aufsatz
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Sprache: | English |
Veröffentlicht: |
2000
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Zugriff auf das übergeordnete Werk: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control
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Schlagworte: | Journal Article |