Novel concepts for GaAs/LiNbO(3) layered systems and their device applications

Thin semiconductor quantum well structures fused onto LiNbO(3 ) substrates using the epitaxial lift-off (ELO) technology offer the possibility of controlling the surface acoustic wave (SAW) velocity via field effect. The tunability of the conductivity in the InGaAs quantum well results in a great ch...

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 47(2000), 1 vom: 28., Seite 242-8
1. Verfasser: Rotter, M (VerfasserIn)
Weitere Verfasser: Ruile, W, Scholl, G, Wixforth, A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2000
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article