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231223s2008 xx |||||o 00| ||eng c |
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|a 10.1021/la703331m
|2 doi
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|a eng
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| 100 |
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|a Tang, Ming
|e verfasserin
|4 aut
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|a Nanometer-scale wetting of the silicon surface by its equilibrium oxide
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|c 2008
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a Date Completed 27.05.2008
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|a Date Revised 03.03.2008
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Despite the extremely broad technical applications of the Si/SiO2 structure, the equilibrium wetting properties of silicon oxide on silicon are poorly understood. Here, we produce new results in which a solid-state buffer method is used to systematically titrate oxygen activity about the Si/SiO2 coexistence value. The equilibrium morphology at the Si(001) surface over >8 decades of PO2 about coexistence is revealed to be a uniform sub-stoichiometric SiOx film of sub-nanometer thickness, coexisting with secondary island structures which coarsen with annealing time. A new thermodynamic method using chemical potential to stabilize and control surficial oxides in nanoscale devices is suggested
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|a Journal Article
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|a Ramos, Ana V
|e verfasserin
|4 aut
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|a Jud, Eva
|e verfasserin
|4 aut
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| 700 |
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|a Chung, Sung-Yoon
|e verfasserin
|4 aut
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| 700 |
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|a Gautier-Soyer, Martine
|e verfasserin
|4 aut
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| 700 |
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|a Cannon, Rowland M
|e verfasserin
|4 aut
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|a Carter, W Craig
|e verfasserin
|4 aut
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| 700 |
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|a Chiang, Yet-Ming
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 24(2008), 5 vom: 04. März, Seite 1891-6
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|g volume:24
|g year:2008
|g number:5
|g day:04
|g month:03
|g pages:1891-6
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|u http://dx.doi.org/10.1021/la703331m
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