Self-assembled biofilm of hydrophobins protects the silicon surface in the KOH wet etch process

The anisotropic wet micromachining of silicon, based on a water solution of potassium hydroxide (KOH), is a standard fabrication process that is extensively exploited in the realization of very complex microsystems, which comprise cantilevers, membranes, and bridges. A nanostructured self-assembled...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 23(2007), 15 vom: 17. Juli, Seite 7920-2
1. Verfasser: De Stefano, Luca (VerfasserIn)
Weitere Verfasser: Rea, Ilaria, Armenante, Annunziata, Giardina, Paola, Giocondo, Michele, Rendina, Ivo
Format: Aufsatz
Sprache:English
Veröffentlicht: 2007
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Fungal Proteins Hydroxides Membranes, Artificial Potassium Compounds potassium hydroxide WZH3C48M4T Silicon Z4152N8IUI
Beschreibung
Zusammenfassung:The anisotropic wet micromachining of silicon, based on a water solution of potassium hydroxide (KOH), is a standard fabrication process that is extensively exploited in the realization of very complex microsystems, which comprise cantilevers, membranes, and bridges. A nanostructured self-assembled biofilm of amphiphilic proteins, the hydrophobins, was deposited on crystalline silicon by solution deposition and characterized by variable-angle spectroscopic ellipsometry (VASE). This procedure formed chemically and mechanically stable mono- and multilayers of self-assembled proteins. The biomolecular membrane has been tested as masking material in the KOH wet etch of the crystalline silicon. The process has been monitored by VASE and atomic force microscopy measurements. Because of the high persistence of the protein biofilm, the hydrophobin-coated silicon surface is perfectly protected during the standard KOH micromachining process
Beschreibung:Date Completed 24.10.2007
Date Revised 21.11.2013
published: Print-Electronic
Citation Status MEDLINE
ISSN:1520-5827