Improved silicon nitride surfaces for next-generation microarrays

This work reports how the use of a standard integrated circuit (IC) fabrication process can improve the potential of silicon nitride layers as substrates for microarray technology. It has been shown that chemical mechanical polishing (CMP) substantially improves the fluorescent intensity of positive...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 22(2006), 26 vom: 19. Dez., Seite 11400-4
1. Verfasser: Terry, Jonathan G (VerfasserIn)
Weitere Verfasser: Campbell, Colin J, Ross, Alan J, Livingston, Andrew D, Buck, Amy H, Dickinson, Paul, Mountford, Christopher P, Evans, Stuart A G, Mount, Andrew R, Beattie, John S, Crain, Jason, Ghazal, Peter, Walton, Anthony J
Format: Aufsatz
Sprache:English
Veröffentlicht: 2006
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Silicon Compounds silicon nitride QHB8T06IDK
LEADER 01000naa a22002652 4500
001 NLM167055135
003 DE-627
005 20231223112113.0
007 tu
008 231223s2006 xx ||||| 00| ||eng c
028 5 2 |a pubmed24n0557.xml 
035 |a (DE-627)NLM167055135 
035 |a (NLM)17154632 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Terry, Jonathan G  |e verfasserin  |4 aut 
245 1 0 |a Improved silicon nitride surfaces for next-generation microarrays 
264 1 |c 2006 
336 |a Text  |b txt  |2 rdacontent 
337 |a ohne Hilfsmittel zu benutzen  |b n  |2 rdamedia 
338 |a Band  |b nc  |2 rdacarrier 
500 |a Date Completed 26.01.2007 
500 |a Date Revised 25.09.2018 
500 |a published: Print 
500 |a Citation Status MEDLINE 
520 |a This work reports how the use of a standard integrated circuit (IC) fabrication process can improve the potential of silicon nitride layers as substrates for microarray technology. It has been shown that chemical mechanical polishing (CMP) substantially improves the fluorescent intensity of positive control gene and test gene microarray spots on both low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films, while maintaining a low fluorescent background. This results in the improved discrimination of low expressing genes. The results for the PECVD silicon nitride, which has been previously reported as unsuitable for microarray spotting, are particularly significant for future devices that hope to incorporate microelectronic control and analysis circuitry, due to the film's use as a final passivating layer 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 7 |a Silicon Compounds  |2 NLM 
650 7 |a silicon nitride  |2 NLM 
650 7 |a QHB8T06IDK  |2 NLM 
700 1 |a Campbell, Colin J  |e verfasserin  |4 aut 
700 1 |a Ross, Alan J  |e verfasserin  |4 aut 
700 1 |a Livingston, Andrew D  |e verfasserin  |4 aut 
700 1 |a Buck, Amy H  |e verfasserin  |4 aut 
700 1 |a Dickinson, Paul  |e verfasserin  |4 aut 
700 1 |a Mountford, Christopher P  |e verfasserin  |4 aut 
700 1 |a Evans, Stuart A G  |e verfasserin  |4 aut 
700 1 |a Mount, Andrew R  |e verfasserin  |4 aut 
700 1 |a Beattie, John S  |e verfasserin  |4 aut 
700 1 |a Crain, Jason  |e verfasserin  |4 aut 
700 1 |a Ghazal, Peter  |e verfasserin  |4 aut 
700 1 |a Walton, Anthony J  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir : the ACS journal of surfaces and colloids  |d 1992  |g 22(2006), 26 vom: 19. Dez., Seite 11400-4  |w (DE-627)NLM098181009  |x 1520-5827  |7 nnns 
773 1 8 |g volume:22  |g year:2006  |g number:26  |g day:19  |g month:12  |g pages:11400-4 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_22 
912 |a GBV_ILN_350 
912 |a GBV_ILN_721 
951 |a AR 
952 |d 22  |j 2006  |e 26  |b 19  |c 12  |h 11400-4