Improved silicon nitride surfaces for next-generation microarrays

Improved silicon nitride surfaces for next-generation microarrays

This work reports how the use of a standard integrated circuit (IC) fabrication process can improve the potential of silicon nitride layers as substrates for microarray technology. It has been shown that chemical mechanical polishing (CMP) substantially improves the fluorescent intensity of positive...

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Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 22(2006), 26 vom: 19. Dez., Seite 11400-4
1. Verfasser: Terry, Jonathan G (VerfasserIn)
Weitere Verfasser: Campbell, Colin J, Ross, Alan J, Livingston, Andrew D, Buck, Amy H, Dickinson, Paul, Mountford, Christopher P, Evans, Stuart A G, Mount, Andrew R, Beattie, John S, Crain, Jason, Ghazal, Peter, Walton, Anthony J
Format: Aufsatz
Sprache:English
Veröffentlicht: 2006
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Silicon Compounds silicon nitride QHB8T06IDK