Improved pattern transfer in nanoimprint lithography at 30 nm half-pitch by substrate-surface functionalization

Improved pattern transfer in nanoimprint lithography at 30 nm half-pitch by substrate-surface functionalization

Resist detachment from the substrate during mold-substrate separation is one of the key challenges for nanoimprint lithography as the pitch of features decreases. We analyzed the problem by considering the surface and interfacial free energies of the initial state and the possible final states of th...

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Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1999. - 21(2005), 14 vom: 05. Juli, Seite 6127-30
1. Verfasser: Jung, Gun-Young (VerfasserIn)
Weitere Verfasser: Li, Zhiyong, Wu, Wei, Ganapathiappan, S, Li, Xuema, Olynick, Deirdre L, Wang, S Y, Tong, William M, Williams, R Stanley
Format: Aufsatz
Sprache:English
Veröffentlicht: 2005
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S.