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231223s2005 xx ||||| 00| ||eng c |
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|a pubmed24n0519.xml
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|a (DE-627)NLM155668595
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|a (NLM)15924459
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Matsui, Jun
|e verfasserin
|4 aut
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|a Fabrication of polymer Langmuir-Blodgett films containing regioregular poly(3-hexylthiophene) for application to field-effect transistor
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|c 2005
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 28.07.2006
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|a Date Revised 31.05.2005
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Semiconducting thin films consisting of regioregular poly(3-hexylthiophene) (RR-PHT) and poly(N-dodecylacrylamide) (pDDA) were constructed by the Langmuir-Blodgett (LB) technique. A mixture of RR-PHT and pDDA spread from a chloroform solution on a water surface forms a stable monolayer, which can be transferred onto solid substrates by the LB method, yielding a well-defined polymer LB film. Surface morphology studies of the LB film indicate that the RR-PHT is dispersed uniformly throughout the surface. The polymer thin film was chemically doped by contacting with FeCl3 acetonitrile solution, and a conductivity of 5.6 S/cm was achieved. Further, the LB film was utilized as the semiconducting film in the field-effect transistor (FET), and mobilities of 2.2 x 10(-4) and 4.4 x 10(-4) cm2 V(-1) s(-1) were obtained by analyzing the saturated and linear regions of the current-voltage characteristic, respectively
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|a Journal Article
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|a Yoshida, Shinsuke
|e verfasserin
|4 aut
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1 |
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|a Mikayama, Takeshi
|e verfasserin
|4 aut
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1 |
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|a Aoki, Atsushi
|e verfasserin
|4 aut
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|a Miyashita, Tokuji
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 21(2005), 12 vom: 07. Juni, Seite 5343-8
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
1 |
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|g volume:21
|g year:2005
|g number:12
|g day:07
|g month:06
|g pages:5343-8
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|a GBV_ILN_721
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|a AR
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|d 21
|j 2005
|e 12
|b 07
|c 06
|h 5343-8
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