Fabrication of polymer Langmuir-Blodgett films containing regioregular poly(3-hexylthiophene) for application to field-effect transistor
Semiconducting thin films consisting of regioregular poly(3-hexylthiophene) (RR-PHT) and poly(N-dodecylacrylamide) (pDDA) were constructed by the Langmuir-Blodgett (LB) technique. A mixture of RR-PHT and pDDA spread from a chloroform solution on a water surface forms a stable monolayer, which can be...
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 21(2005), 12 vom: 07. Juni, Seite 5343-8 |
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| Weitere Verfasser: | , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2005
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids |
| Schlagworte: | Journal Article |
| Zusammenfassung: | Semiconducting thin films consisting of regioregular poly(3-hexylthiophene) (RR-PHT) and poly(N-dodecylacrylamide) (pDDA) were constructed by the Langmuir-Blodgett (LB) technique. A mixture of RR-PHT and pDDA spread from a chloroform solution on a water surface forms a stable monolayer, which can be transferred onto solid substrates by the LB method, yielding a well-defined polymer LB film. Surface morphology studies of the LB film indicate that the RR-PHT is dispersed uniformly throughout the surface. The polymer thin film was chemically doped by contacting with FeCl3 acetonitrile solution, and a conductivity of 5.6 S/cm was achieved. Further, the LB film was utilized as the semiconducting film in the field-effect transistor (FET), and mobilities of 2.2 x 10(-4) and 4.4 x 10(-4) cm2 V(-1) s(-1) were obtained by analyzing the saturated and linear regions of the current-voltage characteristic, respectively |
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| Beschreibung: | Date Completed 28.07.2006 Date Revised 31.05.2005 published: Print Citation Status PubMed-not-MEDLINE |
| ISSN: | 1520-5827 |