Anisotropic thermal expansion behavior of thin films of polymethylsilsesquioxane, a spin-on-glass dielectric for high-performance integrated circuits

Thin films of poly(methylsilsesquioxane) (PMSSQ) are candidates for use as interdielectric layers in advanced semiconductor devices with multilayer structures. We prepared thin films of PMSSQ with thicknesses in the range 25.0-1151.0 nm by spin-casting its soluble precursor onto Si and GaAs substrat...

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Publié dans:Langmuir : the ACS journal of surfaces and colloids. - 1985. - 20(2004), 16 vom: 03. Aug., Seite 6932-9
Auteur principal: Oh, Weontae (Auteur)
Autres auteurs: Ree, Moonhor
Format: Article
Langue:English
Publié: 2004
Accès à la collection:Langmuir : the ACS journal of surfaces and colloids
Sujets:Journal Article