In situ studies of metal-semiconductor interactions with synchrotron radiation
The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 x 10(-10) torr. The deposited...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1998. - 5(1998), Pt 3 vom: 01. Mai, Seite 1050-1 |
|---|---|
| 1. Verfasser: | |
| Weitere Verfasser: | , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
1998
|
| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |
| Zusammenfassung: | The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 x 10(-10) torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of approximately 0.1-monolayer-thick films |
|---|---|
| Beschreibung: | Date Completed 02.10.2012 Date Revised 20.07.2004 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 0909-0495 |