In situ studies of metal-semiconductor interactions with synchrotron radiation
The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 x 10(-10) torr. The deposited...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1998. - 5(1998), Pt 3 vom: 01. Mai, Seite 1050-1 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
1998
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |