New methods for semiconductor charge-diffusion-length measurements using synchrotron radiation
The extension of a new theory on the X-ray energy response of semiconductor detectors is carried out to characterize the X-ray response of a multichannel semiconductor detector fabricated on one silicon wafer. Recently, these multichannel detectors have been widely utilized for position-sensitive ob...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 5(1998), Pt 3 vom: 01. Mai, Seite 874-6 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
1998
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |