Characterization and interpretation of the quantum efficiencies of multilayer semiconductor detectors using a new theory
On the basis of a new theory of semiconductor X-ray detector response, a new type of multilayer semiconductor detector was designed and developed for convenient energy analyses of intense incident X-ray flux in a cumulative-current mode. Another anticipated useful property of the developed detector...
| Veröffentlicht in: | Journal of synchrotron radiation. - 1998. - 5(1998), Pt 3 vom: 01. Mai, Seite 877-9 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , , , , , , , , , |
| Format: | Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
1998
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation |
| Schlagworte: | Journal Article |
| Zusammenfassung: | On the basis of a new theory of semiconductor X-ray detector response, a new type of multilayer semiconductor detector was designed and developed for convenient energy analyses of intense incident X-ray flux in a cumulative-current mode. Another anticipated useful property of the developed detector is a drastic improvement in high-energy X-ray response ranging over several hundred eV. The formula for the quantum efficiency of multilayer semiconductor detectors and its physical interpretations are proposed and have been successfully verified by synchrotron radiation experiments at the Photon Factory. These detectors are useful for data analyses under strong radiation-field conditions, including fusion-plasma-emitting X-rays and energetic heavy-particle beams, without the use of high-bias applications |
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| Beschreibung: | Date Completed 02.10.2012 Date Revised 20.07.2004 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 0909-0495 |