A focusing crystal analyser for the rejection of inelastic X-ray scattering

A focusing crystal analyser has been constructed that allows the rejection of inelastic X-ray scattering during diffuse scattering measurements close to an absorption edge. A Johann geometry was obtained by cylindrical bending of perfect silicon and germanium crystals. The choice of reflection, the...

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Veröffentlicht in:Journal of synchrotron radiation. - 1999. - 10(2003), Pt 3 vom: 01. Mai, Seite 255-9
1. Verfasser: Hamilton, M A (VerfasserIn)
Weitere Verfasser: Metzger, T H, Mazuelas, A, Buslaps, T
Format: Aufsatz
Sprache:English
Veröffentlicht: 2003
Zugriff auf das übergeordnete Werk:Journal of synchrotron radiation
Schlagworte:Journal Article
LEADER 01000caa a22002652 4500
001 NLM124854265
003 DE-627
005 20250203233406.0
007 tu
008 231222s2003 xx ||||| 00| ||eng c
028 5 2 |a pubmed25n0416.xml 
035 |a (DE-627)NLM124854265 
035 |a (NLM)12714757 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Hamilton, M A  |e verfasserin  |4 aut 
245 1 2 |a A focusing crystal analyser for the rejection of inelastic X-ray scattering 
264 1 |c 2003 
336 |a Text  |b txt  |2 rdacontent 
337 |a ohne Hilfsmittel zu benutzen  |b n  |2 rdamedia 
338 |a Band  |b nc  |2 rdacarrier 
500 |a Date Completed 02.10.2003 
500 |a Date Revised 05.06.2019 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a A focusing crystal analyser has been constructed that allows the rejection of inelastic X-ray scattering during diffuse scattering measurements close to an absorption edge. A Johann geometry was obtained by cylindrical bending of perfect silicon and germanium crystals. The choice of reflection, the effect of bending and the contribution of the source size are discussed in relation to the energy resolution. Measurements at the As K-edge (11.867 keV) and at the Cs K-edge (35.985 keV) are presented to demonstrate that the focusing analyser can be used over a wide energy range. A direct comparison with a flat perfect crystal with comparable energy resolution shows a gain in intensity by a factor of 50 
650 4 |a Journal Article 
700 1 |a Metzger, T H  |e verfasserin  |4 aut 
700 1 |a Mazuelas, A  |e verfasserin  |4 aut 
700 1 |a Buslaps, T  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Journal of synchrotron radiation  |d 1999  |g 10(2003), Pt 3 vom: 01. Mai, Seite 255-9  |w (DE-627)NLM09824129X  |x 0909-0495  |7 nnns 
773 1 8 |g volume:10  |g year:2003  |g number:Pt 3  |g day:01  |g month:05  |g pages:255-9 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_40 
912 |a GBV_ILN_350 
912 |a GBV_ILN_2005 
951 |a AR 
952 |d 10  |j 2003  |e Pt 3  |b 01  |c 05  |h 255-9