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231222s2002 xx ||||| 00| ||eng c |
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|a pubmed25n0393.xml
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|a (DE-627)NLM117699063
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|a (NLM)11885676
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Yamashita, Yohachi
|e verfasserin
|4 aut
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| 245 |
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|a Present and future of piezoelectric single crystals and the importance of B-site cations for high piezoelectric response
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|c 2002
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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| 338 |
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 17.04.2002
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|a Date Revised 16.09.2019
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a High quality piezoelectric single crystals, such as Pb(Zn(1/3)Nb(2/3))O3-PbTiO3 (PZNT) and Pb(Mg(1/3)Nb(2/3))O3-PbTiO3 (PMNT), have been investigated, and, because their piezoelectric properties are greatly superior to those of Pb(Zr(1-x)Ti(x))O3 (PZT) ceramics, they have been used for certain transducer applications since the late 1990s. The present situation for these relaxor-PT (lead titanate) single crystals is summarized. In this review, some possible high Tc > 200 degrees C single crystals are also introduced. Single crystals of Pb(In(1/2)Nb(1/2))O3-PbTiO3 (PINT) binary system and Pb(Mg(1/3)Nb(2/3))O3-Pb(Sc(1/2)Nb(1/2))O3-PbTiO3 (PSMNT) tertiary system have been synthesized, and their electrical properties are reported. In addition, a novel guiding principle for discovering excellent piezoelectric materials, namely the presence of low molecular mass B-site ions that can enter the lead-perovskite Pb(B'B'')O3 structure, is introduced
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|a Journal Article
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| 700 |
1 |
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|a Hosono, Yasuharu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Harada, Kouichi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yasuda, Naohiko
|e verfasserin
|4 aut
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| 773 |
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8 |
|i Enthalten in
|t IEEE transactions on ultrasonics, ferroelectrics, and frequency control
|d 1999
|g 49(2002), 2 vom: 15. Feb., Seite 184-92
|w (DE-627)NLM098181017
|x 0885-3010
|7 nnns
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| 773 |
1 |
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|g volume:49
|g year:2002
|g number:2
|g day:15
|g month:02
|g pages:184-92
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| 912 |
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|a GBV_ILN_350
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|a AR
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| 952 |
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|d 49
|j 2002
|e 2
|b 15
|c 02
|h 184-92
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