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231222s2001 xx ||||| 00| ||eng c |
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|a pubmed25n0381.xml
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|a (DE-627)NLM114116261
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|a (NLM)11512931
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Moriga, T
|e verfasserin
|4 aut
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|a Crystallization process of transparent conductive oxides Zn(k)In2O(k+3)
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|c 2001
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Completed 06.09.2001
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|a Date Revised 05.06.2019
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|a published: Print
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|a Citation Status PubMed-not-MEDLINE
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|a Crystallization process of the homologous compounds Zn(k)In2O(k+3) from the coprecipitants was examined by XAFS spectroscopy and X ray diffractometry. Interesting crystallization behavior could be observed. Though zinc oxide already crystallized as the wurtzite-type ZnO at 573K, indium oxide remained amorphous. Subsequently bixbyite-type In2O3 appeared at 873K for k=5 and 7 and at below 773K for the other k-members, respectively. The InO distance in the amorphous In2O3 was a little shorted than that in the bixbyite-type In2O3 by 0.06-7A. The distance remained constant but abruptly increased to that observed in the bixbyite-type In2O3 in accordance with the progress of crystallization. Then the distance gradually decreased and converged to ca. 2.12A at the temperature range of 1173-1373K, due to the reaction between In2O3 and ZnO to form the homologous compound
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|a Journal Article
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|a Fukushima, A
|e verfasserin
|4 aut
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1 |
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|a Tominari, Y
|e verfasserin
|4 aut
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1 |
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|a Hosokawa, S
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Nakabayashi, I
|e verfasserin
|4 aut
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| 700 |
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|a Tominaga, K
|e verfasserin
|4 aut
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|i Enthalten in
|t Journal of synchrotron radiation
|d 1999
|g 8(2001), Pt 2 vom: 01. März, Seite 785-7
|w (DE-627)NLM09824129X
|x 0909-0495
|7 nnns
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| 773 |
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|g volume:8
|g year:2001
|g number:Pt 2
|g day:01
|g month:03
|g pages:785-7
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|a GBV_ILN_350
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|a GBV_ILN_2005
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|a AR
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|d 8
|j 2001
|e Pt 2
|b 01
|c 03
|h 785-7
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