Crystallization process of transparent conductive oxides Zn(k)In2O(k+3)

Crystallization process of the homologous compounds Zn(k)In2O(k+3) from the coprecipitants was examined by XAFS spectroscopy and X ray diffractometry. Interesting crystallization behavior could be observed. Though zinc oxide already crystallized as the wurtzite-type ZnO at 573K, indium oxide remaine...

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Veröffentlicht in:Journal of synchrotron radiation. - 1999. - 8(2001), Pt 2 vom: 01. März, Seite 785-7
1. Verfasser: Moriga, T (VerfasserIn)
Weitere Verfasser: Fukushima, A, Tominari, Y, Hosokawa, S, Nakabayashi, I, Tominaga, K
Format: Aufsatz
Sprache:English
Veröffentlicht: 2001
Zugriff auf das übergeordnete Werk:Journal of synchrotron radiation
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:Crystallization process of the homologous compounds Zn(k)In2O(k+3) from the coprecipitants was examined by XAFS spectroscopy and X ray diffractometry. Interesting crystallization behavior could be observed. Though zinc oxide already crystallized as the wurtzite-type ZnO at 573K, indium oxide remained amorphous. Subsequently bixbyite-type In2O3 appeared at 873K for k=5 and 7 and at below 773K for the other k-members, respectively. The InO distance in the amorphous In2O3 was a little shorted than that in the bixbyite-type In2O3 by 0.06-7A. The distance remained constant but abruptly increased to that observed in the bixbyite-type In2O3 in accordance with the progress of crystallization. Then the distance gradually decreased and converged to ca. 2.12A at the temperature range of 1173-1373K, due to the reaction between In2O3 and ZnO to form the homologous compound
Beschreibung:Date Completed 06.09.2001
Date Revised 05.06.2019
published: Print
Citation Status PubMed-not-MEDLINE
ISSN:0909-0495