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|a Identifying and quantifying point defects in semiconductors using x-ray-absorption spectroscopy
|b Si-doped GaAs
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|c 1995
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|a ohne Hilfsmittel zu benutzen
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|i Enthalten in
|t Physical review. B, Condensed matter
|d 1985
|g 51(1995), 16 vom: 15. Apr., Seite 10527-10538
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