The Trend of 2D Transistors toward Integrated Circuits Scaling Down and New Mechanisms

par Shen, Yang
Publié dans: Advanced materials (Deerfield Beach, Fla.) (2022)

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

par Tian, He
Publié dans: Advanced materials (Deerfield Beach, Fla.) (2015)

Effects of parameters on the accuracy and precision of ultrasound-based local pulse wave velocity measurement a simulation study

par Huang, Chengwu
Publié dans: IEEE transactions on ultrasonics, ferroelectrics, and frequency control (2014)