Single-Gate In-Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching

von Chen, Ching-Hung
Veröffentlicht in: Advanced materials (Deerfield Beach, Fla.) (2023)

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

von Rahaman, Sk Ziaur
Veröffentlicht in: Langmuir : the ACS journal of surfaces and colloids (2017)

Electrophoresis of a charge-regulated zwitterionic particle influence of temperature and bulk salt concentration

von Hsu, Chien
Veröffentlicht in: Langmuir : the ACS journal of surfaces and colloids (2013)

Chemisorption and reaction characteristics of methyl radicals on Cu(110)

von Zhai, Run-Sheng
Veröffentlicht in: Langmuir : the ACS journal of surfaces and colloids (2004)