The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories
Ti/HfOx-based resistive random access memory (RRAM) has been extensively investigated as an emerging nonvolatile memory (NVM) candidate due to its excellent memory performance and CMOS process compatibility. Although the importance of the role of the Ti buffer layer is well recognized, detailed unde...
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Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1999. - 33(2017), 19 vom: 16. Mai, Seite 4654-4665
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| 1. Verfasser: |
Rahaman, Sk Ziaur
(VerfasserIn) |
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| Weitere Verfasser: |
Lin, Yu-De,
Lee, Heng-Yuan,
Chen, Yu-Sheng,
Chen, Pang-Shiu,
Chen, Wei-Su,
Hsu, Chien-Hua,
Tsai, Kan-Hsueh,
Tsai, Ming-Jinn,
Wang, Pei-Hua |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2017
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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