Ultrasensitive and Ultrafast Self-Powered Ultraviolet Photodetector Array for Solar-Blind and Weak-Light Imaging

© 2025 Wiley‐VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2025) vom: 17. Okt., Seite e14968
Auteur principal: Deng, Weilong (Auteur)
Autres auteurs: Fan, Xiangyu, Du, Yuxuan, Ma, Shengyu, Zhang, Hanxu, Liu, Mengting, Zhang, Hao, Chen, Shuo, Fu, Qiang, Zhang, Yumin, Li, Yang, Han, Siyu, Wang, Yang, Yao, Tai, Wang, Xianjie, Song, Bo
Format: Article en ligne
Langue:English
Publié: 2025
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article CuNiO2/SiC heterojunctions arrays self‐powered solar‐blind weak‐light
LEADER 01000naa a22002652c 4500
001 NLM394200144
003 DE-627
005 20251017233652.0
007 cr uuu---uuuuu
008 251017s2025 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202514968  |2 doi 
028 5 2 |a pubmed25n1602.xml 
035 |a (DE-627)NLM394200144 
035 |a (NLM)41104670 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Deng, Weilong  |e verfasserin  |4 aut 
245 1 0 |a Ultrasensitive and Ultrafast Self-Powered Ultraviolet Photodetector Array for Solar-Blind and Weak-Light Imaging 
264 1 |c 2025 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 17.10.2025 
500 |a published: Print-Electronic 
500 |a Citation Status Publisher 
520 |a © 2025 Wiley‐VCH GmbH. 
520 |a Self-powered ultraviolet (UV) photodetectors (PDs) based on wide bandgap semiconductors (WBGSs) and their heterostructures face challenges in ultrasensitive and ultrafast weak-light detection capabilities. In this work, an 8 × 8 UV photodetector array based on CuNiO2/SiC p-n heterojunctions is demonstrated to operate in both solar-blind and weak-light conditions. The device achieves a weak-light detection limit of 4.6 nW·mm-2, a fast response time of 45 ns, and a high responsivity of 104.2 mA·W-1 and a detectivity of 3.4 × 1012 Jones, outperforming self-powered UV PDs based on SiC and Ga2O3-based WBGSs and their heterostructures. This excellent performance of the device originates from the high interface quality, large built-in electric field, Fowler-Nordheim tunneling (FNT) of charge transport, and enhancing light absorption at the heterostructures. Moreover, the detector exhibits a low noise power density below 10-22 A2·Hz-1 and a high cutoff frequency of 5 kHz, enabling it to maintain high-contrast real-time reflection imaging capability under solar illumination 
650 4 |a Journal Article 
650 4 |a CuNiO2/SiC heterojunctions 
650 4 |a arrays 
650 4 |a self‐powered 
650 4 |a solar‐blind 
650 4 |a weak‐light 
700 1 |a Fan, Xiangyu  |e verfasserin  |4 aut 
700 1 |a Du, Yuxuan  |e verfasserin  |4 aut 
700 1 |a Ma, Shengyu  |e verfasserin  |4 aut 
700 1 |a Zhang, Hanxu  |e verfasserin  |4 aut 
700 1 |a Liu, Mengting  |e verfasserin  |4 aut 
700 1 |a Zhang, Hao  |e verfasserin  |4 aut 
700 1 |a Chen, Shuo  |e verfasserin  |4 aut 
700 1 |a Fu, Qiang  |e verfasserin  |4 aut 
700 1 |a Zhang, Yumin  |e verfasserin  |4 aut 
700 1 |a Li, Yang  |e verfasserin  |4 aut 
700 1 |a Han, Siyu  |e verfasserin  |4 aut 
700 1 |a Wang, Yang  |e verfasserin  |4 aut 
700 1 |a Yao, Tai  |e verfasserin  |4 aut 
700 1 |a Wang, Xianjie  |e verfasserin  |4 aut 
700 1 |a Song, Bo  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g (2025) vom: 17. Okt., Seite e14968  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g year:2025  |g day:17  |g month:10  |g pages:e14968 
856 4 0 |u http://dx.doi.org/10.1002/adma.202514968  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |j 2025  |b 17  |c 10  |h e14968