|
|
|
|
| LEADER |
01000caa a22002652c 4500 |
| 001 |
NLM393720632 |
| 003 |
DE-627 |
| 005 |
20251010232014.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
251008s2025 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202509066
|2 doi
|
| 028 |
5 |
2 |
|a pubmed25n1594.xml
|
| 035 |
|
|
|a (DE-627)NLM393720632
|
| 035 |
|
|
|a (NLM)40613247
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a He, Kexin
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Polarization Signal Amplification of 2D GeSe-Based Polarization-Sensitive Photodetectors
|
| 264 |
|
1 |
|c 2025
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 08.10.2025
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2025 Wiley‐VCH GmbH.
|
| 520 |
|
|
|a Polarization-sensitive photodetectors, resolving light intensity, wavelength, and polarization states, enable the characterization of probing microstructure, internal stress, and compositional heterogeneity. Polarizer-free polarization-sensitive photodetectors based on in-plane anisotropic 2D semiconductors offer potential for device miniaturization and on-chip integration, owing to their inherent linear dichroism and orientation-dependent carrier mobilities. Hundreds of in-plane anisotropic 2D materials have been successfully discovered; however, the limited anisotropic photocurrent ratio (PR<10) has hindered the practical application. Herein, a field-effect transistor (FET)-based amplification strategy, enhancing PR from 2.1 to 54.8 in 2D GeSe photodetectors is proposed. This significant PR enhancement arises from polarization-induced resistance variations dynamically modulating gate potentials. Coupled with a steep transistor subthreshold region, small gate fluctuations produce substantial drain current changes, amplifying output anisotropy sensitively. Evaluating four types of FET identifies SMT-Si transistors as optimal due to their high stability, sharp subthreshold, and excellent noise immunity. In addition, the amplified PR signal directly enhances image contrast and recognition accuracy. Notably, with a high-PR signal, the machine learning model achieves a recognition rate of 0.99 in only 17 training epochs, reflecting a computational cost reduction of over 60%. This work provides an effective strategy to enhance PR, benefiting from high-resolution polarization imaging and advanced optoelectronic sensing
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a 2D
|
| 650 |
|
4 |
|a GeSe
|
| 650 |
|
4 |
|a field‐effect transistor
|
| 650 |
|
4 |
|a polarization ratio
|
| 650 |
|
4 |
|a polarization‐sensitive photodetectors
|
| 700 |
1 |
|
|a Ran, Wenhao
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Xu, Shaodi
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wen, Jie
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Qiu, Siqi
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Liu, Tingwei
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Xin, Kaiyao
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Yu, Yali
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Liu, Duan-Yang
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Huang, Qianqian
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Shen, Guozhen
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wei, Zhongming
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhou, Ziqi
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 37(2025), 39 vom: 01. Okt., Seite e2509066
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
|
| 773 |
1 |
8 |
|g volume:37
|g year:2025
|g number:39
|g day:01
|g month:10
|g pages:e2509066
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202509066
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 37
|j 2025
|e 39
|b 01
|c 10
|h e2509066
|