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250926s2025 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202507560
|2 doi
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|a pubmed25n1581.xml
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|a (DE-627)NLM393045072
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|a (NLM)40545917
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|a DE-627
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|a eng
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|a Yang, Chenlu
|e verfasserin
|4 aut
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|a Sulfur-Doped IrO2 Enable Pathway Switch to Lattice Oxygen Mechanism with Enhanced Stability for Low Iridium PEM Water Electrolysis
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|c 2025
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 26.09.2025
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2025 Wiley‐VCH GmbH.
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|a Achieving high activity and stability while minimizing Ir usage poses a significant challenge in the industrialization of proton exchange membrane water electrolysis (PEMWE). Herein we report a sulfur-doping strategy that enables the OER pathway on IrO2 nanoparticles (IrO2/S) to switch from conventional adsorption evolution mechanism (AEM) to lattice oxygen mechanism (LOM) while maintaining Ir─O bond stability, thus achieving a significant enhancement in both intrinsic activity and durability. Advanced spectroscopies and theoretical calculations reveal that the Ir─S coordination motif within the lattice increases the electron density of the Ir center and enhances Ir─O covalency, thus triggering the LOM pathway. Importantly, the lattice distortion and unsaturated Ir─O coordination within the IrO2/S generate the oxygen nonbonding state that acts as an electron sacrificial agent to preserve Ir─O bonds upon the LOM-dominated OER process. As a result, PEMWE integrated with such IrO2/S electrocatalyst delivers a low cell voltage (1.769 V at 2.0 A cm-2) and long-term stability (16.6 µV h⁻¹ over 1000 h1.0 A cm⁻2) while dramatically reducing Ir usage from 1.0 to 0.3 mg cm-2. This work establishes S doping as a viable strategy to trigger LOM and stabilize lattice oxygen redox in Ir-based catalysts, opening a new avenue for low-Ir PEMWEs
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|a Journal Article
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|a PEM water electrolysis
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4 |
|a iridium
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|a lattice oxygen mechanism
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|a oxygen evolution reaction
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4 |
|a oxygen nonbonding state
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|a Zhu, Yanping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Fengru
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yao, Longping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Yihe
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lu, Tongchan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Qixuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Guoliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Qingqing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Hui
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 37(2025), 38 vom: 01. Sept., Seite e2507560
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:37
|g year:2025
|g number:38
|g day:01
|g month:09
|g pages:e2507560
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|u http://dx.doi.org/10.1002/adma.202507560
|3 Volltext
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|d 37
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|e 38
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|h e2507560
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