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250910s2025 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202507536
|2 doi
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|a pubmed25n1563.xml
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|a (DE-627)NLM392310651
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|a (NLM)40928159
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Shi, Zengguang
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Phase Stabilization of In2Se3 by Disordered Ni Intercalation and its Enhanced Thermoelectrical Performance
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|c 2025
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 10.09.2025
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|a published: Print-Electronic
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|a Citation Status Publisher
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|a © 2025 Wiley‐VCH GmbH.
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|a Van der Waals (vdW) layered materials have gained significant attention owing to their distinctive structure and unique properties. The weak interlayer bonding in vdW layered materials enables guest atom intercalation, allowing precise tuning of their physical and chemical properties. In this work, a ternary compound, NixIn2Se3 (x = 0-0.3), with Ni randomly occupying the interlayers of In2Se3, is synthesized via an intercalation route driven by electron injection. The intercalated Ni atoms act as "anchor points" within the interlayer of In2Se3, which effectively suppresses the phase transition of In2Se3 at elevated temperatures. Furthermore, the disordered Ni intercalation significantly enhanced the electrical conductivity of In2Se3 through electron injection, while reducing the thermal conductivity due to the interlayer phonon scattering, leading to an improved thermoelectric performance. For instance, the thermoelectric figure of merit (ZT) of Ni0.3In2Se3 increased by 86% (in-plane) and 222% (out-of-plane) compared to In2Se3 at 500 °C. These findings not only provide an effective strategy to enhance the performance of layered thermoelectric materials but also demonstrate the potential of intercalation chemistry for expanding the application scope of van der Waals (vdW) layered materials
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|a Journal Article
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|a In2Se3
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| 650 |
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4 |
|a Ni0.3In2Se3
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| 650 |
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4 |
|a disordered intercalation
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| 650 |
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4 |
|a phase stability
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| 650 |
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4 |
|a thermoelectric properties
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| 700 |
1 |
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|a Xiao, Yukun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Mian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cai, Jianfeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Yanmei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ouyang, Xiaoping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chai, Zhifang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Qing
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2025) vom: 10. Sept., Seite e07536
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g year:2025
|g day:10
|g month:09
|g pages:e07536
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|u http://dx.doi.org/10.1002/adma.202507536
|3 Volltext
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